Strong Visible Light Emission from Zinc-Blende InGaN/GaN Pn Junction on Silicon Substrate
The zinc-blende GaN (c-GaN) crystals on Si(100) substrates were successfully grown by metal organic chemical vapor deposition (MOCVD) technique with BP buffer layer. The cubic phase purity was higher than 93%. We also grew InGaN single quantum well (SQW) on n-type c-GaN and cover with p-type c-GaN t...
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Published in | ECS transactions Vol. 53; no. 2; pp. 87 - 91 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
01.01.2013
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Online Access | Get full text |
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Summary: | The zinc-blende GaN (c-GaN) crystals on Si(100) substrates were successfully grown by metal organic chemical vapor deposition (MOCVD) technique with BP buffer layer. The cubic phase purity was higher than 93%. We also grew InGaN single quantum well (SQW) on n-type c-GaN and cover with p-type c-GaN to make pn junction. When the electric current passed through the pn junction, surprisingly strong light was emitted from the junction. |
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ISSN: | 1938-5862 1938-6737 |
DOI: | 10.1149/05302.0087ecst |