250 nm period grating transferred by proximity i-line mask-aligner lithography
This Letter, describes a fabrication method based on a high refractive index binary phase mask combined with a suitable illumination setup, which produces a close to normal incidence illumination, to fabricate sub-micrometer diffraction gratings. The method uses the i-line (365 nm) of a mercury lamp...
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| Published in | Optics letters Vol. 39; no. 6; p. 1665 |
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| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
United States
15.03.2014
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| Online Access | Get more information |
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| Summary: | This Letter, describes a fabrication method based on a high refractive index binary phase mask combined with a suitable illumination setup, which produces a close to normal incidence illumination, to fabricate sub-micrometer diffraction gratings. The method uses the i-line (365 nm) of a mercury lamp spectrum in a mask-aligner in proximity mode, to avoid any contact between the mask and the wafer, which is normally used to produce high resolution structures. The transfer of the structure in a fused silica wafer demonstrates that mask-aligner lithography can produce high aspect ratio sub-wavelength structures without resorting to any contact between mask and wafer. |
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| ISSN: | 1539-4794 |
| DOI: | 10.1364/OL.39.001665 |