Correlation between the dislocation configuration and the related scattering behaviour of hcp single crystals by application of the Fourier transformation approach

• Published in: Computational materials science Vol. 7; no. 1; pp. 167 - 172
• Main Authors: Hao, Y., Mu¨cklich, F., Petzow, G.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.12.1996
• Subjects: Diffraction; Dislocation configuration; Fourier transformation; Single crystal; Fourier transformation; Diffraction; Dislocation configuration; Single crystal
• ISSN: 0927-0256; 1879-0801
• DOI: 10.1016/S0927-0256(96)00076-6

A new procedure for studying the diffraction intensity distribution for real single crystals is proposed for the case of nearly parallel dislocations. This procedure is based on the Fourier transformation algorithm, by means of which the diffraction intensity can be estimated by studying the local dislocation arrangement. By cutting and etching a specific crystallographic plane, which was nearly parallel to the diffraction plane to be studied, the arrangements of linear dislocations could be simplified as point fields. Thus, the displacement field in the direction of the diffraction vector could be estimated. The diffraction behaviour which is determined by the displacement field was then obtained by calculating a cross correlation function. The results derived from this procedure exhibit good agreement with those from experimental measurements.