Electrical Properties of 4H-Silicon Carbide Complementary Metal–Oxide–Semiconductor Devices with Wet-Processed Gate Oxide

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 48; no. 4S; p. 4
Main Authors Okamoto, Mitsuo, Yatsuo, Tsutomu, Fukuda, Kenji, Okumura, Hajime
Format Journal Article
LanguageEnglish
Published 01.04.2009
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.48.04C087