(Invited) Scalable GaN-on-Silicon Using Rare Earth Oxide Buffer Layers

Growth of GaN epilayers on silicon (111) is achieved by using a rare earth oxide buffer layer technology. The use of the REO material system allows strain engineering of the silicon wafers prior to GaN growth in order to mitigate stresses formed during the growth and subsequent cooling process. Allo...

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Bibliographic Details
Published inECS transactions Vol. 50; no. 9; pp. 1065 - 1071
Main Authors Arkun, F. Erdem, Lebby, Michael, Dargis, Rytis, Roucka, Radek, Smith, Robin S., Clark, Andrew
Format Journal Article
LanguageEnglish
Published 15.03.2013
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Summary:Growth of GaN epilayers on silicon (111) is achieved by using a rare earth oxide buffer layer technology. The use of the REO material system allows strain engineering of the silicon wafers prior to GaN growth in order to mitigate stresses formed during the growth and subsequent cooling process. Alloying of oxides with more than one rare earth element allows compositional and lattice parameter control of the REO material and thereby imparting different strains into the silicon wafer. The wafer bow of the REO/Si heterostructures is also a found to be dependent on the thickness of the oxide layers grown. Growth of GaN on REO/Si templates result in lower bow compared to growth on silicon wafers alone.
ISSN:1938-5862
1938-6737
DOI:10.1149/05009.1065ecst