Application of Advanced Characterization Techniques to SmartSiC™ Product for Substrate-Level Device Performance Optimization

A review of the specific characterisation techniques developed and customized for SmartSiC™ substrates is given. A focus is made on thermal characterization of this engineered structure as well as its beneficial features with regards to bipolar degradation.

Saved in:
Bibliographic Details
Published inMaterials science forum Vol. 1124; pp. 27 - 34
Main Authors Zielinski, Marcin, Cela, Enrica, Radisson, Damien, Chapelle, Audrey, Schwarzenbach, Walter, Guiot, Eric, Simon, Roland B., Drouin, Alexis, Biard, Hugo
Format Journal Article
LanguageEnglish
Published Pfaffikon Trans Tech Publications Ltd 21.08.2024
Subjects
Performance degradation
Structural analysis
Substrates
Thermodynamic properties
Characterization
Thermal Simulation
Quality Control Plan
Wafer Bonding
Engineered Substrate
Thermal Boundary Resistance
Bipolar Degradation
SmartSiC
Online AccessGet full text

Cover

More Information
Summary:A review of the specific characterisation techniques developed and customized for SmartSiC™ substrates is given. A focus is made on thermal characterization of this engineered structure as well as its beneficial features with regards to bipolar degradation.
Bibliography:Special topic volume with invited peer-reviewed papers only
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/p-Bf6cd7