Electron confinement enhancement in AlGaN/AlN/GaN HEMT using BGaN buffer

• Published in: Journal of Ovonic Research Vol. 19; no. 1; pp. 81 - 86
• Main Authors: Gassoumi, M., Helali, A., Elleuch, Z., Boughdiri, N., Guesmi, H., Rejab, S., Maaref, H.
• Format: Journal Article
• Language: English
• Published: 01.01.2023
• ISSN: 1584-9953; 1584-9953
• DOI: 10.15251/JOR.2023.191.81

When the AlGaN/GaN high electron mobility transistor (HEMT) is strongly biased, the speed of the electrons in the channel increases, which leads to an injection of electrons into the buffer, and consequently the appearance of the "short channel effect" phenomenon, which limits the performance of the component to overcome this effect and increase the power/frequency performance of the component, one solution consists in using a confinement barrier. This involves placing an electrostatic barrier under the GaN channel so as to block the injection of electrons into the buffer layer when the transistor is highly biased, and a BGaN confinement barrier because this semiconductor has very interesting physical properties, as well as better electrical isolation between the well and the substrate thanks to the optimization of the buffer. In this paper, the main objective is to study the effect of adding BGaN confinement barrier and its influence on transistor performance.