VIB-1 new hot-carrier-induced degradation phenomena in half-micrometer MOS transistors

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 34; no. 11; p. 2384
Main Authors Nitayama, A., Takenouchi, N., Hamamoto, T., Oowaki, Y.
Format Journal Article
LanguageEnglish
Published IEEE 01.11.1987
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Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1987.23316