106‐GHz bandwidth InP DHBT linear driver with a 3‐V ppdiff swing at 80 GBd in PAM‐4
This Letter reports the design, fabrication and characterisation of a new differential linear driver, fabricated in the III-V Lab 0.7-urn:x-wiley:00135194:media:ell2bf07079:ell2bf07079-math-0001 emitter width indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. Large-si...
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Published in | Electronics letters Vol. 56; no. 14; pp. 691 - 693 |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
IET
01.07.2020
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Subjects | |
Online Access | Get full text |
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Summary: | This Letter reports the design, fabrication and characterisation of a new differential linear driver, fabricated in the III-V Lab 0.7-urn:x-wiley:00135194:media:ell2bf07079:ell2bf07079-math-0001 emitter width indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. Large-signal electrical characterisation shows 80-GBd symbol-rate four-level pulse amplitude (PAM-4) modulation conjugated with a driver output swing of 3-Vppdiff and a 0.74-W power consumption. Thus resulting in a 1.22-GBd driving efficiency, the highest in over 70-GBd drivers' state-of-the-art, at that date. Accordingly, S-parameter measurements of the standalone linear driver exhibit the highest gain-bandwidth product of 556 GHz, in that current state-of-the-art. |
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ISSN: | 0013-5194 1350-911X |
DOI: | 10.1049/el.2020.0654 |