Misfit dislocation nucleation study in p/p+ silicon

• Published in: Journal of the Electrochemical Society Vol. 148; no. 7; pp. G379 - G382
• Main Authors: FEICHTINGER, Petra, GOORSKY, Mark S, OSTER, Dwain, D'SILVA, Tom, MORELAND, Jim
• Format: Journal Article
• Language: English
• Published: Pennington, NJ Electrochemical Society 2001
• Subjects: Applied sciences; Composition; defects and impurities; Condensed matter: structure, mechanical and thermal properties; Electronics; Exact sciences and technology; Microelectronic fabrication (materials and surfaces technology); Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Solid surfaces and solid-solid interfaces; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); MOS technology; Epitaxial layers; Misfit dislocations; Dislocation nucleation; Semiconductor materials; p p+ junction; Doped materials; Experimental study; Microelectronic fabrication; Nonmetals; Wafers; Boron additions; Fabrication structure relation; Silicon; p-type conductors; Defect formation
• ISSN: 0013-4651; 1945-7111
• DOI: 10.1149/1.1375796