Gate-first high-k/metal gate DRAM technology for low power and high performance products

It is the first time that the high-k/metal gate technology was used at peripheral transistors for fully integrated and functioning DRAM. For cost effective DRAM technology, capping nitride spacer was used on cell bit-line scheme, and single work function metal gate was employed without strain techno...

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Published in2015 IEEE International Electron Devices Meeting (IEDM) pp. 26.6.1 - 26.6.4
Main Authors Sung, Minchul, Jang, Se-Aug, Lee, Hyunjin, Ji, Yun-Hyuck, Kang, Jae-Il, Jung, Tae-O, Ahn, Tae-Hang, Son, Yun-Ik, Kim, Hyung-Chul, Lee, Sun-Woo, Lee, Seung-Mi, Lee, Jung-Hak, Baek, Seung-Beom, Doh, Eun-Hyup, Cho, Heung-Jae, Jang, Tae-Young, Jang, Il-Sik, Han, Jae-Hwan, Ko, Kyung-Bo, Lee, Yu-Jun, Shin, Su-Bum, Yu, Jae-Seon, Cho, Sung-Hyuk, Han, Ji-Hye, Kang, Dong-Kyun, Kim, Jinsung, Lee, Jae-Sang, Ban, Keun-Do, Yeom, Seung-Jin, Nam, Hyun-Wook, Lee, Dong-Kyu, Jeong, Mun-Mo, Kwak, Byungil, Park, Jeongsoo, Choi, Kisik, Park, Sung-Kye, Kwak, Noh-Jung, Hong, Sung-Joo
Format Conference Proceeding Journal Article
LanguageEnglish
Published IEEE 01.12.2015
Subjects
Devices
Dynamic random access memory
Gain
Gates
Gold
Logic gates
Meetings
MOSFET circuits
Random access memory
Semiconductor devices
Silicon germanides
Tin
Transistors
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Summary:It is the first time that the high-k/metal gate technology was used at peripheral transistors for fully integrated and functioning DRAM. For cost effective DRAM technology, capping nitride spacer was used on cell bit-line scheme, and single work function metal gate was employed without strain technology. The threshold voltage was controlled by using single TiN metal gate with La2O3 and SiGe/Si epi technology. The optimized DRAM high-k/metal gate peripheral transistors showed current gains of 65%/55% and DIBL improvements of 52%/46% for nMOSFET and pMOSFET, respectively. The results in process yield, performance, and reliability characteristics of the technology on 4Gb DRAM have shown that the gate-first high-k/metal gate DRAM technology can be regarded as one of the major candidates for next-generation low power DRAM products.
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SourceType-Conference Papers & Proceedings-2
ISSN:2156-017X
DOI:10.1109/IEDM.2015.7409775