Manipulation of the spin memory of electrons in n-GaAs

We report on the optical manipulation of the electron spin relaxation time in a GaAs-based heterostructure. Experimental and theoretical study shows that the average electron spin relaxes through hyperfine interaction with the lattice nuclei, and that the rate can be controlled by electron-electron...

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Bibliographic Details
Published inPhysical review letters Vol. 88; no. 25 Pt 1; p. 256801
Main Authors Dzhioev, R I, Korenev, V L, Merkulov, I A, Zakharchenya, B P, Gammon, D, Efros, Al L, Katzer, D S
Format Journal Article
LanguageEnglish
Published United States 24.06.2002
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Summary:We report on the optical manipulation of the electron spin relaxation time in a GaAs-based heterostructure. Experimental and theoretical study shows that the average electron spin relaxes through hyperfine interaction with the lattice nuclei, and that the rate can be controlled by electron-electron interactions. This time has been changed from 300 ns down to 5 ns by variation of the laser frequency. This modification originates in the optically induced depletion of an n-GaAs layer.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.88.256801