Effects of multiband electron-hole scattering and hole wave-function symmetry on minority-electron transport in GaAs

• Published in: Journal of applied physics Vol. 66; no. 10; pp. 4791 - 4800
• Main Authors: SADRA, K, MAZIAR, C. M, STREETMAN, B. G, TANG, D. S
• Format: Journal Article
• Language: English
• Published: Woodbury, NY American Institute of Physics 15.11.1989
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity phenomena in semiconductors and insulators; Electronic transport in condensed matter; Exact sciences and technology; Low-field transport and mobility; piezoresistance; Physics; Monte Carlo method; Minority carrier; Hole; Semiconductor materials; Wave function; Charge carrier mobility; Theoretical study; Electron hole pair; Inorganic compound; Gallium Arsenides; Energy loss; Charge carrier scattering; Charge carrier concentration; Drift velocity; Electrons; Symmetry
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.343792

A Monte Carlo investigation of the effect of multiband electron-hole scattering on steady-state minority-electron transport in room-temperature p-GaAs is reported. A comparative study of the strength of such scattering mechanisms is presented and shows that a careful treatment of these processes is indispensible for a quantitative microscopic understanding of minority-electron behavior. The effect of the p-type symmetry of hole wave functions on multiband processes and minority-electron transport is also described. Finally, we discuss several additional issues, which we believe must be carefully investigated before present Monte Carlo treatments of electron-hole scattering can provide reliable quantitative information.