Dislocation Reactions in a Semipolar Gallium Nitride Layer Grown on a Vicinal Si(001) Substrate Using Aluminum Nitride and 3C–SiC Buffer Layers

• Published in: Physics of the solid state Vol. 61; no. 12; pp. 2316 - 2320
• Main Authors: Sorokin, L. M., Gutkin, M. Yu, Myasoedov, A. V., Kalmykov, A. E., Bessolov, V. N., Kukushkin, S. A.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.12.2019; Springer; Springer Nature B.V
• Subjects: Aluminum; Buffer layers; Burgers vector; Epitaxial growth; Epitaxy; Gallium nitrate; Gallium nitrides; Liquors; Nitrides; Physics; Physics and Astronomy; Semiconductors; Silicon carbide; Silicon substrates; Solid State Physics; Threading dislocations; Vapor phase epitaxy; Vapor phases; dislocation reactions; TEM; semipolar gallium nitride
• ISSN: 1063-7834; 1090-6460
• DOI: 10.1134/S1063783419120527

Transmission electron microscopy was used to study the interaction of a + c and a dislocations in a thick (14 μm) semipolar GaN layer grown by hydride vapor phase epitaxy on a 3 C -SiC/Si(001) template. It is shown that the propagation of a dislocation half-loop with a Burgers vector b = during cooling can be blocked due to its reaction with a threading dislocation with a Burgers vector b = with the formation of a dislocation segment with a Burgers vector b = 〈0001〉. The gain in energy of the system as a result of such reaction is theoretically estimated. Within the approximation of dislocation linear tension, this gain is ~7.6 eV/Å, which gives ~45.6 keV for new dislocation segment with a length of ~600 nm. The contribution of the energy of the dislocation core is estimated as ~19.1 keV.