Structural, optical and photoluminescence properties of BaLa2ZnO5: Eu3+ phosphor: A prospective red-emitting phosphor for LED applications

Herein, we report the synthesis of red-emitting Eu3+-activated BaLa2ZnO5 phosphors using a high-temperature solid-state reaction technique. The phase confirmation and crystal structure were established through X-ray powder diffraction patterns. Density-functional theory calculations revealed an indi...

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Published inOptical materials Vol. 148; p. 114797
Main Authors Ayoub, Irfan, Mushtaq, Umer, Yagoub, M.Y.A., Som, Sudipta, Coetsee, E., Mishra, Yogendra Kumar, Swart, Hendrik C., Kumar, Vijay
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.02.2024
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Summary:Herein, we report the synthesis of red-emitting Eu3+-activated BaLa2ZnO5 phosphors using a high-temperature solid-state reaction technique. The phase confirmation and crystal structure were established through X-ray powder diffraction patterns. Density-functional theory calculations revealed an indirect bandgap in the material. The bandgaps of both undoped and doped BaLa2ZnO5 phosphors were analyzed using diffuse reflectance spectra. The influence of Eu3+ doping on the bandgap was confirmed by applying the Kubelka-Munk function to the diffuse reflectance spectra. The effects of doping on the surface morphology and elemental composition were investigated through field emission scanning electron microscopy and energy-dispersive spectroscopy, respectively. Additionally, X-ray photoelectron spectroscopic studies were conducted to analyze the electronic structure, chemical states and impact of doping on the crystal structure. Using near ultraviolet excitation at 329 nm, the synthesized phosphor exhibited strong red emission attributed to various 5D0 → 7FJ transitions. Concentration quenching phenomena were observed due to dipole-dipole interactions. Judd-Ofelt analysis was performed to elucidate the coordination nature of the doping element in the host lattice. Excellent thermal stability was observed with an activation energy of 0.64 eV for discharging via lattice vibrations. The better color purity (98–99.3 %) and stable Commission Internationale de l’Elcairage coordinates in the red region of the gamut suggest that the prepared phosphor material holds potential as an efficient candidate for ultra violet and blue light-emitting diode chips, as well as an efficient component in the fabrication of white light-emitting diodes. •The crystal structure of the phosphor comprises three polyhedral: LaO8, BaO10, and ZnO4.•DFT calculations indicate that the synthesized phosphor possesses an indirect bandgap.•XPS studies validate the defined structure.•Judd-Ofelt theory reveals the symmetric nature of the dopant in the host matrix.•Phosphor can serve as an efficient component in the fabrication of wLEDs.
ISSN:0925-3467
1873-1252
DOI:10.1016/j.optmat.2023.114797