GaN metal-oxide-semiconductor devices with ZrO2 as dielectric layers

• Published in: Applied surface science Vol. 469; pp. 98 - 102
• Main Authors: Zhang, Guozhen, Zheng, Meijuan, Wan, Jiaxian, Wu, Hao, Liu, Chang
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.03.2019
• Subjects: Atomic layer deposition; MOS; p-GaN; Silver nanowires; ZrO2; MOS; p-GaN; ZrO2; Atomic layer deposition; Silver nanowires
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2018.10.214

•Distinguished accumulation and depletion regions.•A low interface trap density of 1.4 × 1011 cm−2.•Innovation of AZO/Ag nanowires composite electrodes. P-type GaN metal oxide semiconductors (MOS) with ZrO2 dielectrics have been fabricated. Here, H2O and O3 were selected as oxidizers for ZrO2 growth by atomic layer deposition. The MOS devices with O3 oxidant demonstrated a smaller flat band voltage than that with H2O oxidant. A Ga2O3 interlayer was formed between GaN and O3-grown ZrO2, which can effectively decrease interfacial state density to 1.5 × 1011 cm−2. Meanwhile, the innovation of AlZnO (AZO)/Ag nanowires (AgNWs)/AlZnO composite electrodes can further decrease the flat band voltage to about a half compared to that with traditional Cr/Au electrodes and superior electrical performance was achieved.