Impact of vacuum anneal at low temperature on Al2O3/In-based III–V interfaces

• Published in: Chemical physics letters Vol. 539-540; pp. 139 - 143
• Main Authors: Martinez, E., Grampeix, H., Desplats, O., Herrera-Gomez, A., Ceballos-Sanchez, O., Guerrero, J., Yckache, K., Martin, F.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 29.06.2012
• ISSN: 0009-2614; 1873-4448
• DOI: 10.1016/j.cplett.2012.05.029

[Display omitted] ► AR-XPS is used to investigate the interface between Al2O3 and III–V substrates. ► No interfacial oxide is observed on InGaAs after anneal under UHV at 600°C. ► A clear difference is reported regarding indium oxidation under vacuum at 400°C. ► Indium hydroxide is formed only on InAs, in contrast with InP and InGaAs. ► On InP, a transition from InPOx to POx is observed after anneal at 400°C. We report on the effect of vacuum anneal on interfacial oxides formed between Al2O3 and III–V semiconductors. On InGaAs, no interfacial oxide is detected after annealing at 600°C under UHV whereas annealing under secondary vacuum favours the regrowth of thin InGaOx interfacial oxide. Lowering the temperature at 400°C highlights the effect of III–V substrates since In–OH bonds are only formed on InAs by OH release from TMA/H2O deposited alumina. On InGaAs, regrowth of InGaOx is observed, as a result of preferential oxidation of Ga. On InP, a transition from InPOx to POx is highlighted.