Development and Electrical Properties of (Ca0.7Sr0.3) (Zr0.8Ti0.2)O3 Thin Film Applied to Embedded Decoupling Capacitors

• Published in: IEEE electron device letters Vol. 35; no. 7; pp. 777 - 779
• Main Authors: LEE, Seung-Hwan, KIM, Hong-Ki, KANG, Min-Gyu, KANG, Chong-Yun, LEE, Sung-Gap, LEE, Young-Hie, YOON, Jung-Rag
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.07.2014; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Capacitance; Capacitors; CSZT; Dielectric losses; Dielectric, amorphous and glass solid devices; Electrodes; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; embedded capacitor; Exact sciences and technology; FDE; Leakage currents; Materials; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; CSZT; FDE; embedded capacitor; Dielectric loss; Printed circuit board; Thin film; Inductance; Decoupling; Capacitance; Leakage current; Printed circuit; Series resistance; Capacitor; Current density; Electrical characteristic
• DOI: 10.1109/LED.2014.2320295
• ISSN: 0741-3106

A formed device embedded-type 0402 sized (Ca 0.7 Sr 0.3 ) (Zr 0.8 Ti 0.2 )O 3 (CSZT) embedded capacitor was fabricated for use in embedded printed circuit board. The capacitance and dielectric loss of the CSZT embedded capacitor were 406.1 pF and 0.015, respectively, at 1 MHz. The CSZT embedded capacitor exhibits stable capacitance with varying applied voltage and C Zero G (-55 °C-125 °C, delta C/C = ±30 ppm/°C) properties. The measured values of equivalent series resistance and equivalent series inductance were 6.1 Ω and 62.39 μH, respectively. The leakage current density was 0.78 μA/cm 2 at 3 V of applied voltage. These electrical properties indicate that the CSZT embedded capacitor holds promise for use as an embedded passive capacitor.