Development and Electrical Properties of (Ca0.7Sr0.3) (Zr0.8Ti0.2)O3 Thin Film Applied to Embedded Decoupling Capacitors
A formed device embedded-type 0402 sized (Ca 0.7 Sr 0.3 ) (Zr 0.8 Ti 0.2 )O 3 (CSZT) embedded capacitor was fabricated for use in embedded printed circuit board. The capacitance and dielectric loss of the CSZT embedded capacitor were 406.1 pF and 0.015, respectively, at 1 MHz. The CSZT embedded capa...
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Published in | IEEE electron device letters Vol. 35; no. 7; pp. 777 - 779 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.07.2014
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | A formed device embedded-type 0402 sized (Ca 0.7 Sr 0.3 ) (Zr 0.8 Ti 0.2 )O 3 (CSZT) embedded capacitor was fabricated for use in embedded printed circuit board. The capacitance and dielectric loss of the CSZT embedded capacitor were 406.1 pF and 0.015, respectively, at 1 MHz. The CSZT embedded capacitor exhibits stable capacitance with varying applied voltage and C Zero G (-55 °C-125 °C, delta C/C = ±30 ppm/°C) properties. The measured values of equivalent series resistance and equivalent series inductance were 6.1 Ω and 62.39 μH, respectively. The leakage current density was 0.78 μA/cm 2 at 3 V of applied voltage. These electrical properties indicate that the CSZT embedded capacitor holds promise for use as an embedded passive capacitor. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2014.2320295 |