Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor

• Published in: IEEE journal of the Electron Devices Society Vol. 12; pp. 779 - 784
• Main Authors: Yeon Jung, Su, Kim, Hyunwoo, Lee, Jongmin, Hyun Kim, Jang
• Format: Journal Article
• Language: English
• Published: New York IEEE 2024; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: CAD; Calibration; Computer aided design; dipole alignment; Dipoles; electric field; Electric fields; FeFETs; ferroelectric; Ferroelectric field-effect transistor (FeFET); Ferroelectric materials; Ferroelectricity; ferroelectricity (FE); Field effect transistors; Impact analysis; Iron; Logic gates; Parameters; Performance evaluation; Semiconductor devices; Technology assessment; Thickness; Threshold voltage; Transistors; work-function variation (WFV)
• ISSN: 2168-6734; 2168-6734
• DOI: 10.1109/JEDS.2024.3465594

We analyzed the impact of work-function variation (WFV) in ferroelectric field-effect transistor (FeFET). To analyze the operation characteristics, we employed the technology computer-aided design (TCAD) simulations. After evaluating ferroelectricity (FE) characteristics and optimizing device model parameters through calibration, we extracted five key parameters from the hysteretic transfer curves of the FeFET: threshold voltage (Vth), on current (Iin), subthreshold swing (SS), off current (Ioff), and gate-induced drain leakage (GIDL). The extracted parameters were compared based on the presence or absence of FE and the ferroelectric thickness. It was confirmed that the presence of FE leads to increased variation due to dipole alignment with WFV, and that the electric field is maintained even with an increase in ferroelectric thickness