p-GaN/AlGaN/GaN Micro-LED Integrated with Monolithic Driving IC

The monolithic integration of a driving integrated circuit (IC) with a micro-light-emitting diode (microLED) offers the advantage of transfer-free integration between the LED and the driving IC. A p-GaN/AlGaN/GaN heterojunction platform was employed to fabricate the monolithically integrated driving...

Full description

Saved in:
Bibliographic Details
Published inJournal of semiconductor technology and science Vol. 25; no. 2; pp. 128 - 133
Main Authors Oh, Hee-Jae, Oh, Dong-Ik, Kim, Hyun-Seop, Cha, Ho-Young
Format Journal Article
LanguageEnglish
Published 대한전자공학회 01.04.2025
Subjects
전기공학
Online AccessGet full text

Cover

More Information
Summary:The monolithic integration of a driving integrated circuit (IC) with a micro-light-emitting diode (microLED) offers the advantage of transfer-free integration between the LED and the driving IC. A p-GaN/AlGaN/GaN heterojunction platform was employed to fabricate the monolithically integrated driving IC within individual microLED pixels. A 2T1C driving IC, featuring enhancement-mode GaN transistors and a metal-insulator-metal (MIM) capacitor, was designed and monolithically fabricated on a single wafer. The prototype micro-LED pixel with the integrated driving IC demonstrated successful operation, with fast rise and fall times of 20 ns and 50 ns, respectively KCI Citation Count: 0
ISSN:2233-4866
1598-1657
1598-1657
2233-4866
DOI:10.5573/JSTS.2025.25.2.128