A Novel Self-aligned Processing for Doubling the Integration Density of 3D NAND Flash Memory

• Published in: Journal of semiconductor technology and science Vol. 25; no. 3; pp. 199 - 205
• Main Authors: Oh, Yun-Jae, Suh, Yunejae, Son, So-Won, Cho, Seongjae, Kang, Daewoong, Cho, Il-Hwan
• Format: Journal Article
• Language: English
• Published: 대한전자공학회 01.06.2025
• Subjects: 전기공학

In this paper, we propose a novel processing idea to double the number of cells in 3D NAND flash memory to overcome the stacking cell limit of conventional 3D NAND flash memory. We present a process integration flow primarily focused on selective etching, where the core innovation lies in using mate...