Aluminum incorporation efficiencies in A - and C -plane AlGaN grown by MOVPE

The aluminum incorporation efficiencies in nonpolar A-plane and polar C-plane AlGaN films grown by metalorganic vapour phase epitaxy (MOVPE) are investigated. It is found that the aluminum content in A-plane AlGaN film is obviously higher than that in the C-plane sample when the growth temperature i...

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Published inChinese physics B Vol. 25; no. 4; pp. 48105 - 48108
Main Authors Han, Dong-Yue, Li, Hui-Jie, Zhao, Gui-Juan, Wei, Hong-Yuan, Yang, Shao-Yan, Wang, Lian-Shan
Format Journal Article
LanguageEnglish
Published 01.04.2016
Subjects
Aluminum
Aluminum gallium nitrides
Chambers
Epitaxy
Inlets
Optoelectronic devices
Ultraviolet
Vapour
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Summary:The aluminum incorporation efficiencies in nonpolar A-plane and polar C-plane AlGaN films grown by metalorganic vapour phase epitaxy (MOVPE) are investigated. It is found that the aluminum content in A-plane AlGaN film is obviously higher than that in the C-plane sample when the growth temperature is above 1070 degree C. The high aluminum incorporation efficiency is beneficial to fabricating deep ultraviolet optoelectronic devices. Moreover, the influences of the gas inlet ratio, the V/III ratio, and the chamber pressure on the aluminum content are studied. The results are important for growing the AlGaN films, especially nonpolar AlGaN epilayers.
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ISSN:1674-1056
1741-4199
DOI:10.1088/1674-1056/25/4/048105