Continuously clocked 1 GHz GaAs CCD

The continuously clocked operation of a buried channel, Schottky-barrier gate GaAs CCD is described at clock frequencies in excess of 1 GHz. A charge transfer efficiency of >0.9999 per transfer is measured at low frequency and 0.994 per transfer at 1 GHz. It is postulated that the high frequency...

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Bibliographic Details
Published inIEEE electron device letters Vol. 2; no. 3; pp. 70 - 72
Main Authors Deyhimy, I., Hill, W.A., Anderson, R.J.
Format Journal Article
LanguageEnglish
Published IEEE 01.03.1981
Subjects
Charge coupled devices
Charge measurement
Charge transfer
Charge-coupled image sensors
Clocks
Current measurement
Frequency measurement
Gallium arsenide
Silicon
Surface acoustic wave devices
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Summary:The continuously clocked operation of a buried channel, Schottky-barrier gate GaAs CCD is described at clock frequencies in excess of 1 GHz. A charge transfer efficiency of >0.9999 per transfer is measured at low frequency and 0.994 per transfer at 1 GHz. It is postulated that the high frequency transfer efficiency is a limitation of the equipment.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1981.25344