Study of the Surface Condition for Surface-Activation Bonding of Si-Si Wafers

Si-Si wafer direct bonding was performed by surface activation with Ar ion beam bombardment. The X-ray photoelectron spectroscopy (XPS) spectrum of the Si surface before and after the Ar ion beam bombardment was measured in situ to study the bonding condition quantitatively. The condition of the Ar...

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Bibliographic Details
Published inJournal of the Vacuum Society of Japan Vol. 52; no. 3; pp. 114 - 116
Main Authors INAMURA, Miki, YOSHIDA, Noriko, ODA, Tomohiro, ABE, Tomoyuki, ABE, Hideyuki, KUSUNOKI, Isao
Format Journal Article
LanguageEnglish
Japanese
Published The Vacuum Society of Japan 2009
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Summary:Si-Si wafer direct bonding was performed by surface activation with Ar ion beam bombardment. The X-ray photoelectron spectroscopy (XPS) spectrum of the Si surface before and after the Ar ion beam bombardment was measured in situ to study the bonding condition quantitatively. The condition of the Ar ion beam bombardment gave the effect for the surface roughness, which was measured by Atom force microscope (AFM). The surface roughness is strongly related to the bonding. The roughness less than Ra=1 nm is necessary for the Si-Si wafer direct bonding.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1882-2398
1882-4749
DOI:10.3131/jvsj2.52.114