A self-powered ZnO nanoarrays/GaN heterojunction ultraviolet photodetectors grown on Si(111) substrate
A self-powered, ZnO nanorod arrays (NRs)/GaN/Si heterojunction ultraviolet (UV) photodetector was synthesized straightforwardly. This high-performance device has an excellent response under UV radiation without bias. The tensile stress at the ZnO/GaN/Si interface presumably strengthened the built-in...
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Published in | Bulletin of materials science Vol. 45; no. 3; p. 105 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Bangalore
Indian Academy of Sciences
01.09.2022
Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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Summary: | A self-powered, ZnO nanorod arrays (NRs)/GaN/Si heterojunction ultraviolet (UV) photodetector was synthesized straightforwardly. This high-performance device has an excellent response under UV radiation without bias. The tensile stress at the ZnO/GaN/Si interface presumably strengthened the built-in electric field, which effectively separated and extracted the photogenerated electron–hole pairs. These results may provide a new synthetic pathway towards low-cost, high-performance, self-powered ZnO/GaN heterojunction UV photodetectors. |
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ISSN: | 0973-7669 0250-4707 0973-7669 |
DOI: | 10.1007/s12034-022-02679-4 |