A self-powered ZnO nanoarrays/GaN heterojunction ultraviolet photodetectors grown on Si(111) substrate

A self-powered, ZnO nanorod arrays (NRs)/GaN/Si heterojunction ultraviolet (UV) photodetector was synthesized straightforwardly. This high-performance device has an excellent response under UV radiation without bias. The tensile stress at the ZnO/GaN/Si interface presumably strengthened the built-in...

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Bibliographic Details
Published inBulletin of materials science Vol. 45; no. 3; p. 105
Main Authors Yan, Mingna, Yu, Naisen, Du, Shiyu, Li, Haiou, Wu, Yunfeng
Format Journal Article
LanguageEnglish
Published Bangalore Indian Academy of Sciences 01.09.2022
Springer Nature B.V
Subjects
Behavior
Bias
Chemistry and Materials Science
Electric fields
Engineering
Finite element analysis
Gallium nitrides
Heterojunctions
Light
Materials Science
Morphology
Nanorods
Photometers
Silicon substrates
Spectrum analysis
Tensile stress
Ultraviolet detectors
Ultraviolet radiation
Zinc oxide
Self-power photodetector
ZnO
tensile stress
GaN
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Summary:A self-powered, ZnO nanorod arrays (NRs)/GaN/Si heterojunction ultraviolet (UV) photodetector was synthesized straightforwardly. This high-performance device has an excellent response under UV radiation without bias. The tensile stress at the ZnO/GaN/Si interface presumably strengthened the built-in electric field, which effectively separated and extracted the photogenerated electron–hole pairs. These results may provide a new synthetic pathway towards low-cost, high-performance, self-powered ZnO/GaN heterojunction UV photodetectors.
ISSN:0973-7669
0250-4707
0973-7669
DOI:10.1007/s12034-022-02679-4