Controlled infiltration profile of SiC coating layer on graphite by Si vapor deposition reaction

SiC-coated graphite was successfully fabricated at different temperatures (1300-1600 oC) through a silicon vapor depositionreaction (Si-VDR) process. Si powder was used for the Si source of the SiC coating layers. When Si powder was evaporatedat high temperature near the melting point of bulk Si, Si...

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Published inJournal of Ceramic Processing Research Vol. 20; no. 2; pp. 169 - 172
Main Authors Kuk-Jin Hwang, Yoon-Cheol Lee, Jung-Tae Hwang, Si-Young Bae, Seong Min Jeong, Myung-Hyun Lee, Kyoung-Ho Kim, Heesoo Lee
Format Journal Article
LanguageEnglish
Published 세라믹연구소 01.04.2019
Subjects
재료공학
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Summary:SiC-coated graphite was successfully fabricated at different temperatures (1300-1600 oC) through a silicon vapor depositionreaction (Si-VDR) process. Si powder was used for the Si source of the SiC coating layers. When Si powder was evaporatedat high temperature near the melting point of bulk Si, Si gases are moved and changed into Si liquid at the surface of thegraphite. The high-temperature process facilitated the formation of SiC coating layers on the graphite. The microstructural,mechanical, and thermal oxidation properties of the coated graphite were investigated. KCI Citation Count: 1
ISSN:1229-9162
2672-152X
DOI:10.36410/jcpr.2019.20.2.169