Morphology of Si nanocrystallites embedded in SiO2 matrix
The nanostructure of Six(SiO2)1–x films deposited on quartz substrate, where x varies from 0 to 1, was determined by high-resolution transmission electron microscopy in the sample regions with x ≈ 0.1, 0.2, 0.5, and 0.75. In the Si0.5(SiO2)0.5 region, the formation of a Si nanocrystallite network wa...
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| Published in | Journal of materials research Vol. 23; no. 11; pp. 2990 - 2995 |
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| Main Authors | , , , |
| Format | Journal Article |
| Language | English |
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New York, USA
Cambridge University Press
01.11.2008
Springer International Publishing |
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| Abstract | The nanostructure of Six(SiO2)1–x films deposited on quartz substrate, where x varies from 0 to 1, was determined by high-resolution transmission electron microscopy in the sample regions with x ≈ 0.1, 0.2, 0.5, and 0.75. In the Si0.5(SiO2)0.5 region, the formation of a Si nanocrystallite network was established. At high concentrations of Si nanocrystallites, nanotwins and stacking faults occurred in the crystallites. Large Si crystallites appeared at x ⩾ 0.5 in the quartz substrate under the interface, while the film presented nanopores over the interface. The mechanisms for the formation of the nanocrystallites were discussed and correlated with the film properties. |
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| AbstractList | The nanostructure of Six(SiO2)1–x films deposited on quartz substrate, where x varies from 0 to 1, was determined by high-resolution transmission electron microscopy in the sample regions with x ≈ 0.1, 0.2, 0.5, and 0.75. In the Si0.5(SiO2)0.5 region, the formation of a Si nanocrystallite network was established. At high concentrations of Si nanocrystallites, nanotwins and stacking faults occurred in the crystallites. Large Si crystallites appeared at x ⩾ 0.5 in the quartz substrate under the interface, while the film presented nanopores over the interface. The mechanisms for the formation of the nanocrystallites were discussed and correlated with the film properties. The nanostructure of Si x (SiO 2 ) 1– x films deposited on quartz substrate, where x varies from 0 to 1, was determined by high-resolution transmission electron microscopy in the sample regions with x ≈ 0.1, 0.2, 0.5, and 0.75. In the Si 0.5 (SiO 2 ) 0.5 region, the formation of a Si nanocrystallite network was established. At high concentrations of Si nanocrystallites, nanotwins and stacking faults occurred in the crystallites. Large Si crystallites appeared at x ⩾ 0.5 in the quartz substrate under the interface, while the film presented nanopores over the interface. The mechanisms for the formation of the nanocrystallites were discussed and correlated with the film properties. The nanostructure of Six(SiO2)1-x films deposited on quartz substrate, where x varies from 0 to 1, was determined by high-resolution transmission electron microscopy in the sample regions with x 0.,0.,0.5, and 0.75. In the SiO.5(SiO2)0.5 region, the formation of a Si nanocrystallite network was established. At high concentrations of Si nanocrystallites, nanotwins and stacking faults occurred in the crystallites. Large Si crystallites appeared at x > or = 0.5 in the quartz substrate under the interface, while the film presented nanopores over the interface. The mechanisms for the formation of the nanocrystallites were discussed and correlated with the film properties. |
| Author | Teodorescu, V.S. Ciurea, M.L. Iancu, V. Blanchin, M-G. |
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| Cites_doi | 10.1103/PhysRevB.62.16820 10.1080/00018737500101431 10.1016/0955-2219(92)90010-B 10.1016/0040-6090(95)08112-7 10.1103/PhysRevB.69.155311 10.1038/nmat1307 10.1063/1.1589168 10.1016/j.cplett.2006.03.070 10.1002/pssa.200675361 10.1016/S0022-0248(00)00204-9 10.1023/A:1015388912729 10.1063/1.2115069 10.1063/1.1308096 10.1103/PhysRevB.74.075334 10.1016/j.tsf.2006.11.052 10.1063/1.1664026 10.1016/S0040-6090(98)00532-X 10.1016/j.jcrysgro.2007.04.025 10.1016/S0022-0248(97)00408-9 10.1016/j.tsf.2007.02.003 10.1016/j.physe.2006.12.009 10.1063/1.1433906 10.1088/0022-3727/36/19/L02 10.1016/S0304-3991(97)00005-3 10.1016/0038-1098(95)00299-5 10.1007/s003390100993 10.1016/0022-2313(96)00070-1 |
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| References | Iacona, Bongiorno, Spinella, Boninelli, Priolo (CR8) 2004; 95 Hadjisavvas, Kelires (CR23) 2007; 38 Mathiot, Schunck, Perego, Fanciulli, Normand, Tsamis, Tsoukalas (CR30) 2003; 94 Guha, Qadri, Musket, Wall, Shimizu-Iwayama (CR15) 2000; 88 Iancu, Draghici, Jdira, Ciurea (CR17) 2004; 6 CR19 Hayashi, Yamamoto (CR3) 1996; 70 Bauerle (CR29) 1995 Walters, Bourianoff, Atwater (CR2) 2005; 4 Zhang, Zhang, Yuan (CR12) 1998; 326 Riabinina, Durand, Rosei, Chaker (CR11) 2007; 204 Riabinina, Durand, Margot, Chaker, Botton, Rosei (CR10) 2006; 74 Fischer, Petrova-Koch, Shcheglov, Brandt, Koch (CR14) 1996; 276 Du, Li, Lu, Sun (CR26) 2007; 305 Khomenkova, Korsunska, Stara, Venger, Sada, Trave, Goldstein, Jedrzejewski, Savir (CR28) 2007; 515 Lamkin, Riley, Fordham (CR31) 1992; 10 Thuillier, Boyeaux, Kaminski, Laugier (CR21) 2003 Zacharias, Heitmann, Scholz, Kahler, Schmidt, Bläsing (CR13) 2002; 80 Wakayama, Inokuma, Hasegawa (CR22) 1998; 183 You, Heng, Ma, Ma, Zong, Wu, Qin (CR4) 2000; 212 Malm, O’Keefe (CR24) 1997; 68 Uematsu, Gunji, Tsuchiya, Itoh (CR32) 2007; 515 Baldan (CR33) 2002; 37 Huang, Oda (CR1) 2005; 87 Takeoka, Fujii, Hayashi (CR6) 2000; 62 Kahler, Hofmeister (CR27) 2002; 74 Murakami, Suzuki, Makimura, Tamura (CR9) 1999; 69 Liu, Chen, Fu, Tse, Hsieh, Ho, Liu (CR16) 2003; 36 Ciurea, Teodorescu, Iancu, Balberg (CR18) 2006; 423 Dovrat, Oppenheim, Jedrzejewski, Balberg, Sa’ar (CR5) 2004; 69 Timofeev, Aydinli, Ellialtioglu, Türkoglu, Güre, Mikhailov, Lavrova (CR7) 1995; 95 Stavarache, Ciurea (CR25) 2007; 9 Abeles, Sheng, Coutts, Arie (CR20) 1975; 24 |
| References_xml | – volume: 62 start-page: 16820 year: 2000 ident: CR6 article-title: Size-dependent photoluminescence from surface-oxidized Si nanocrystals in a weak confinement regime. publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.62.16820 contributor: fullname: Hayashi – volume: 24 start-page: 407 year: 1975 ident: CR20 article-title: Structural and electrical properties of granular metal films. publication-title: Adv. Phys. doi: 10.1080/00018737500101431 contributor: fullname: Arie – volume: 10 start-page: 347 year: 1992 ident: CR31 article-title: Oxygen mobility in silicon dioxide and silicate glasses: A review. publication-title: J. Eur. Ceram. Soc. doi: 10.1016/0955-2219(92)90010-B contributor: fullname: Fordham – volume: 276 start-page: 100 year: 1996 ident: CR14 article-title: Continuously tunable photoluminescence from Si -implanted and thermally annealed SiO films. publication-title: Thin Solid Films doi: 10.1016/0040-6090(95)08112-7 contributor: fullname: Koch – volume: 69 start-page: 155311 year: 2004 ident: CR5 article-title: Radiative versus nonradiative decay processes in silicon nanocrystals probed by time-resolved photoluminescence spectroscopy. publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.69.155311 contributor: fullname: Sa’ar – volume: 6 start-page: 53 year: 2004 ident: CR17 article-title: Conduction mechanisms in silicon-based nanocomposites. publication-title: J. Optoelectron. Adv. Mater. contributor: fullname: Ciurea – volume: 4 start-page: 143 year: 2005 ident: CR2 article-title: Field-effect electroluminescence in silicon nanocrystals. publication-title: Nat. Mater. doi: 10.1038/nmat1307 contributor: fullname: Atwater – volume: 69 start-page: S13 year: 1999 ident: CR9 article-title: Si nanocrystallites in SiO with intense visible photoluminescence synthesized from SiO films deposited by laser ablation. publication-title: Appl. Phys. A contributor: fullname: Tamura – volume: 9 start-page: 2644 year: 2007 ident: CR25 article-title: Percolation phenomena in Si–SiO nanocomposite films. publication-title: J. Optoelectron. Adv. Mater. contributor: fullname: Ciurea – volume: 94 start-page: 2136 year: 2003 ident: CR30 article-title: Silicon self-diffusivity measurement in thermal SiO by Si/ Si isotopic exchange. publication-title: J. Appl. Phys. doi: 10.1063/1.1589168 contributor: fullname: Tsoukalas – volume: 423 start-page: 225 year: 2006 ident: CR18 article-title: Electronic transport in Si/SiO nanocomposite films. publication-title: Chem. Phys. Lett. doi: 10.1016/j.cplett.2006.03.070 contributor: fullname: Balberg – volume: 204 start-page: 1623 year: 2007 ident: CR11 article-title: Luminescent silicon nanostructures synthesized by laser ablation. publication-title: Phys. Status Solidi A doi: 10.1002/pssa.200675361 contributor: fullname: Chaker – volume: 212 start-page: 109 year: 2000 ident: CR4 article-title: Precipitation and crystallization of nanometer Si clusters in annealed Si-rich SiO films. publication-title: J. Cryst. Growth doi: 10.1016/S0022-0248(00)00204-9 contributor: fullname: Qin – volume: 37 start-page: 2171 year: 2002 ident: CR33 article-title: Review progress in Ostwald ripening theories and their applications to nickel-base superalloys. Part I: Ostwald ripening theories. publication-title: J. Mater. Sci. doi: 10.1023/A:1015388912729 contributor: fullname: Baldan – volume: 87 start-page: 173107 year: 2005 ident: CR1 article-title: Charge storage in nitrided nanocrystalline silicon dots. publication-title: Appl. Phys. Lett. doi: 10.1063/1.2115069 contributor: fullname: Oda – volume: 88 start-page: 3954 year: 2000 ident: CR15 article-title: Characterization of Si nanocrystals grown by annealing SiO films with uniform concentrations of implanted Si. publication-title: J. Appl. Phys. doi: 10.1063/1.1308096 contributor: fullname: Shimizu-Iwayama – volume: 74 start-page: 075334 year: 2006 ident: CR10 article-title: Nucleation and growth of Si nanocrystals in an amorphous SiO matrix. publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.74.075334 contributor: fullname: Rosei – volume: 515 start-page: 6596 year: 2007 ident: CR32 article-title: Enhanced oxygen exchange near the oxide/silicon interface during silicon thermal oxidation. publication-title: Thin Solid Films doi: 10.1016/j.tsf.2006.11.052 contributor: fullname: Itoh – volume: 95 start-page: 3723 year: 2004 ident: CR8 article-title: Formation and evolution of luminescent Si nanoclusters produced by thermal annealing of SiO films. publication-title: J. Appl. Phys. doi: 10.1063/1.1664026 contributor: fullname: Priolo – volume: 326 start-page: 92 year: 1998 ident: CR12 article-title: The preparation of photoluminescent Si nanocrystal–SiO films by reactive evaporation. publication-title: Thin Solid Films doi: 10.1016/S0040-6090(98)00532-X contributor: fullname: Yuan – ident: CR19 – volume: 305 start-page: 59 year: 2007 ident: CR26 article-title: Preferential growth of Si nanocrystals in SiO /Si/SiO sandwich structure. publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2007.04.025 contributor: fullname: Sun – start-page: 58 year: 2003 ident: CR21 article-title: Transmission electron microscopy and EDS analysis of screen-printed contacts formation on multicrystalline silicon solar cells. publication-title: Mater. Sci. Eng., B contributor: fullname: Laugier – start-page: 576 year: 1995 ident: CR29 publication-title: Laser Processing and Chemistry contributor: fullname: Bauerle – volume: 183 start-page: 124 year: 1998 ident: CR22 article-title: Nanoscale structural investigation of Si crystallites grown from silicon suboxide films by thermal annealing. publication-title: J. Cryst. Growth doi: 10.1016/S0022-0248(97)00408-9 contributor: fullname: Hasegawa – volume: 515 start-page: 6749 year: 2007 ident: CR28 article-title: Depth redistribution of components of SiO layers prepared by magnetron sputtering in the process of their decomposition. publication-title: Thin Solid Films doi: 10.1016/j.tsf.2007.02.003 contributor: fullname: Savir – volume: 38 start-page: 99 year: 2007 ident: CR23 article-title: Theory of interface structure, energetics, and electronic properties of embedded Si/ -SiO nanocrystals. publication-title: Physica E (Amsterdam) doi: 10.1016/j.physe.2006.12.009 contributor: fullname: Kelires – volume: 80 start-page: 661 year: 2002 ident: CR13 article-title: Size-controlled highly luminescent silicon nanocrystals: A SiO/SiO superlattice approach. publication-title: Appl. Phys. Lett. doi: 10.1063/1.1433906 contributor: fullname: Bläsing – volume: 36 start-page: L97 year: 2003 ident: CR16 article-title: A study on Si nanocrystal formation in Si-implanted SiO films by x-ray photoelectron spectroscopy. publication-title: J. Phys. D: Appl. Phys. doi: 10.1088/0022-3727/36/19/L02 contributor: fullname: Liu – volume: 68 start-page: 13 year: 1997 ident: CR24 article-title: Deceptive “lattice spacings” in high-resolution micrographs of metal nanoparticles. publication-title: Ultramicroscopy doi: 10.1016/S0304-3991(97)00005-3 contributor: fullname: O’Keefe – volume: 95 start-page: 443 year: 1995 ident: CR7 article-title: Visible photoluminescence from SiO films grown by low temperature plasma enhanced chemical vapor deposition. publication-title: Solid State Commun. doi: 10.1016/0038-1098(95)00299-5 contributor: fullname: Lavrova – volume: 74 start-page: 13 year: 2002 ident: CR27 article-title: Size evolution and photoluminescence of silicon nanocrystallites in evaporated SiO thin films upon thermal processing. publication-title: Appl. Phys. A doi: 10.1007/s003390100993 contributor: fullname: Hofmeister – volume: 70 start-page: 352 year: 1996 ident: CR3 article-title: Optical properties of Si-rich SiO films in relation with embedded Si mesoscopic particles. publication-title: J. Lumin. doi: 10.1016/0022-2313(96)00070-1 contributor: fullname: Yamamoto |
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| Snippet | The nanostructure of Six(SiO2)1–x films deposited on quartz substrate, where x varies from 0 to 1, was determined by high-resolution transmission electron... The nanostructure of Si x (SiO 2 ) 1– x films deposited on quartz substrate, where x varies from 0 to 1, was determined by high-resolution transmission... The nanostructure of Six(SiO2)1-x films deposited on quartz substrate, where x varies from 0 to 1, was determined by high-resolution transmission electron... |
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| Title | Morphology of Si nanocrystallites embedded in SiO2 matrix |
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