Morphology of Si nanocrystallites embedded in SiO2 matrix

The nanostructure of Six(SiO2)1–x films deposited on quartz substrate, where x varies from 0 to 1, was determined by high-resolution transmission electron microscopy in the sample regions with x ≈ 0.1, 0.2, 0.5, and 0.75. In the Si0.5(SiO2)0.5 region, the formation of a Si nanocrystallite network wa...

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Bibliographic Details
Published inJournal of materials research Vol. 23; no. 11; pp. 2990 - 2995
Main Authors Teodorescu, V.S., Ciurea, M.L., Iancu, V., Blanchin, M-G.
Format Journal Article
LanguageEnglish
Published New York, USA Cambridge University Press 01.11.2008
Springer International Publishing
Subjects
Applied and Technical Physics
Biomaterials
Inorganic Chemistry
Materials Engineering
Materials Science
Nanostructure
Nanotechnology
Transmission electron microscopy (TEM)
Transmission electron microscopy (TEM)
Si
Nanostructure
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Summary:The nanostructure of Six(SiO2)1–x films deposited on quartz substrate, where x varies from 0 to 1, was determined by high-resolution transmission electron microscopy in the sample regions with x ≈ 0.1, 0.2, 0.5, and 0.75. In the Si0.5(SiO2)0.5 region, the formation of a Si nanocrystallite network was established. At high concentrations of Si nanocrystallites, nanotwins and stacking faults occurred in the crystallites. Large Si crystallites appeared at x ⩾ 0.5 in the quartz substrate under the interface, while the film presented nanopores over the interface. The mechanisms for the formation of the nanocrystallites were discussed and correlated with the film properties.
Bibliography:ark:/67375/6GQ-RX4WQF5N-B
PII:S0884291400030478
ArticleID:03047
istex:A9C5B4B6B49FD44DB19C572F08A36A7FD713662E
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0884-2914
2044-5326
DOI:10.1557/JMR.2008.0358