Atomic Layer Deposition of Aluminum Oxide for Surface Passivation of InGaAs∕InP Heterojunction Bipolar Transistors

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Bibliographic Details
Published inJournal of the Electrochemical Society Vol. 158; no. 12; p. H1279
Main Authors Driad, R., Benkhelifa, F., Kirste, L., Mikulla, M., Ambacher, O.
Format Journal Article
LanguageEnglish
Published 2011
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ISSN:0013-4651
DOI:10.1149/2.060112jes