Theoretical valley-polarized subgap transport and intravalley pairing states in a silicene-based antiferromagnet–superconductor junction

• Published in: Journal of physics. D, Applied physics Vol. 57; no. 23; pp. 235302 - 235309
• Main Authors: Ding, Zixuan, Wang, Donghao, Huang, Chuanshuai, Li, Mengyao, Tao, Yongchun, Huang, Fengliang
• Format: Journal Article
• Language: English
• Published: IOP Publishing 07.06.2024
• Subjects: antiferromagnetic silicene; superconducting junction; valley-polarized subgap transport
• ISSN: 0022-3727; 1361-6463
• DOI: 10.1088/1361-6463/ad30b0

Abstract We theoretically study the valley-polarized subgap transport and intravalley pairing states in silicene-based antiferromagnet/superconductor (AF/SC) junctions. It is found that in the absence of an electric field, the antiferromagnetic order induced in silicene can give rise to valley-polarized states that strongly affect the subgap conductance. With the increasing antiferromagnetic exchange field, the gap-edge Andreev-resonant peak is replaced by broadened features for the homo-SC model whereas by a sharp conductance dip for the bulk-SC one. This significant difference arises from the intravalley Andreev reflection caused by the valley-mixing scattering in the bulk-SC model, which can be enhanced by the antiferromagnetic order. Particularly, this intravalley pairing process can be switched on or off by adjusting the spin polarization through the electric field applied in the AF region. Our findings not only pave a new road to employ antiferromagnetic materials in valleytronics, but also facilitate the verification and detection of potential intravalley pairing state and valley polarization in silicene.