A New Physical 1/f Noise Model for Double-Stack High-k Gate-Dielectric MOSFETs

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Bibliographic Details
Published inIEEE electron device letters Vol. 30; no. 12; pp. 1365 - 1367
Main Authors SEUNG HYUN SONG, CHOI, Hyun-Sik, JEONG, Yoon-Ha, BAEK, Rock-Hyun, CHOI, Gil-Bok, PARK, Min-Sang, KYUNG TAEK LEE, HYUN CHUL SAGONG, LEE, Sang-Hyun, SUNG WOO JUNG, CHANG YONG KANG
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 01.12.2009
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
MOSFET
Electric field
low-frequency noise (LFN)
High-k
Stacking
Tunnel effect
Multiple layer
High k dielectric
1/f noise
Time constant
Modeling
MOSFETs
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2009.2033721