Robust High-Resistance State and Improved Endurance of HfOX Resistive Memory by Suppression of Current Overshoot
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Published in | IEEE electron device letters Vol. 32; no. 11; pp. 1585 - 1587 |
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Main Authors | , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
Institute of Electrical and Electronics Engineers
01.11.2011
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Subjects | |
Online Access | Get full text |
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ISSN: | 0741-3106 1558-0563 |
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DOI: | 10.1109/LED.2011.2166051 |