Diamond nucleation on surface of C60 thin layers

Diamond nucleation on the surface of C60 thin layers and intermediate layer of Si substrates are studied by scanning electron microscopy (SEM). The cross-section SEM images of diamond films show that diamond grains really nucleate on the surface of C60 thin layers. The SEM images of diamond nucleati...

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Bibliographic Details
Published inScience China. Mathematics Vol. 40; no. 6; pp. 668 - 672
Main Author 杨国伟 袁放成 刘大军 何金田 张兵临
Format Journal Article
LanguageEnglish
Published Heidelberg Springer Nature B.V 01.06.1997
Subjects
C60
diamond
Diamond films
Nucleation
Scanning electron microscopy
Silicon substrates
Thin films
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ISSN1674-7283
1006-9283
1869-1862
1862-2763
DOI10.1007/bf02876073

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Summary:Diamond nucleation on the surface of C60 thin layers and intermediate layer of Si substrates are studied by scanning electron microscopy (SEM). The cross-section SEM images of diamond films show that diamond grains really nucleate on the surface of C60 thin layers. The SEM images of diamond nucleating sites show the nucleating aggregation of diamond on C60 surfaces. The preferential oriented diamond films are observed. The plasma pre-treatment of C60 sublimating layers is a key factor for diamond nucleation.
Bibliography:YANG Guowei , YUAN Fangcheng(Institute of Modern Physics, Xiangtan University, Xiangtan 411105, China)LIU Dajun , HE Jintian ZHANG Binglin(Department of Physics, Zhengzhou University, Zhengzhou 450052, China)
11-5837/O1
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ISSN:1674-7283
1006-9283
1869-1862
1862-2763
DOI:10.1007/bf02876073