Properties and use of cycled grown OMVPE GaAs:Zn, GaAs:Se, and GaAs:Si layers for high-conductance GaAs tunnel junctions

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Bibliographic Details
Published inJournal of electronic materials Vol. 21; no. 9; pp. 893 - 899
Main Authors VENKATASUBRAMANIAN, R, TIMMONS, M. L, COLPITTS, T. S, ASHER, S
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 01.09.1992
Subjects
140501 - Solar Energy Conversion- Photovoltaic Conversion
400500 - Photochemistry
426000 - Engineering- Components, Electron Devices & Circuits- (1990-)
Applied sciences
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
CRYSTAL DOPING
DATA
DIRECT ENERGY CONVERTERS
ELECTRICAL PROPERTIES
Electronics
ENGINEERING
EPITAXY
Exact sciences and technology
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY
Interfaces
IONS
NUMERICAL DATA
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PNICTIDES
SELENIUM IONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SILICON IONS
SOLAR CELLS
SOLAR ENERGY
SOLAR EQUIPMENT
TUNNEL DIODES
VAPOR PHASE EPITAXY
ZINC IONS
Gallium Arsenides
Growth from vapor
Electrical properties
Epitaxy
Organometallic compound
Tunnel junction
Junction
Experimental study
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ISSN:0361-5235
1543-186X
DOI:10.1007/BF02665546