Simulation of a Vertical Ballistic Quantum-Barrier Field-Effect Transistor Based on an Undoped AlxGa1–xAs Quantum Nanowire

• Published in: Russian microelectronics Vol. 52; no. 6; pp. 483 - 492
• Main Authors: Pozdnyakov, D. V., Borzdov, A. V., Borzdov, V. M.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.12.2023; Springer Nature B.V
• Subjects: Aluminum oxide; Current voltage characteristics; Electrical Engineering; Electron transport; Engineering; Field effect transistors; Nanowires; Semiconductor devices; Transistors; Tunnels; vertical field-effect transistor; ballistic electron transport; semiconductor quantum nanowire
• ISSN: 1063-7397; 1608-3415
• DOI: 10.1134/S1063739723700749

A design and topological solution for a tunnel field-effect transistor of a new type is proposed and the simulation of the transistor is performed. The device is a vertical ballistic field-effect transistor with a cylindrical metallic gate based on a cylindrical undoped Al x Ga 1– x As quantum nanowire located in an Al 2 O 3 matrix. For the given geometry of the device structure, the optimum of the fraction of aluminum in the semiconductor composition varying along the transistor channel is found, at which, unlike a conventional tunnel field-effect transistor, not only is the complete suppression of the quantum barrier for electrons by a positive gate voltage ensured but also the minimum possible electrical resistance of the transistor channel is achieved. The current-voltage characteristics of the transistor are calculated within the framework of a rigorous quantum-mechanical description of the electron transport in its channel, taking into account the nonparabolic nature of the band structure of the semiconductor.