Sapphire hardness in different crystallographic directions

The sapphire hardness in different crystallographic planes has been investigated in a wide range of indenter loads. It is shown that the sapphire microhardness is approximately the same for different crystallographic directions: 22–23 GPa. The resistance to the indenter penetration decreases with an...

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Bibliographic Details
Published inBulletin of the Russian Academy of Sciences. Physics Vol. 73; no. 10; pp. 1380 - 1382
Main Authors Sinani, A. B., Dynkin, N. K., Lytvinov, L. A., Konevsky, P. V., Andreev, E. P.
Format Journal Article
LanguageEnglish
Published Heidelberg Allerton Press, Inc 01.10.2009
Springer Nature B.V
Subjects
Basal plane
Crystallography
Hadrons
Heavy Ions
Loads (forces)
Microhardness
Nuclear Physics
Penetration resistance
Physics
Physics and Astronomy
Planes
Proceedings of the XVIII St. Petersburg Readings on the Problems of Crystal Strength and Growth Dedicated to the Memory of A.V. Stepanov
Sapphire
Crystallographic Direction
Sapphire
High Speed Impact
Load Dependence
Crystallographic Plane
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Summary:The sapphire hardness in different crystallographic planes has been investigated in a wide range of indenter loads. It is shown that the sapphire microhardness is approximately the same for different crystallographic directions: 22–23 GPa. The resistance to the indenter penetration decreases with an increase in the load, especially strongly in the basal plane.
ISSN:1062-8738
1934-9432
DOI:10.3103/S1062873809100177