Theoretical and experimental determination of the initial stage of plastic relaxation of misfit stresses in a (111) substrate-film islands heterosystem

A model for determining the critical thickness of a film h c is developed to introduce misfit dislocations in the slip planes of a film and a substrate parallel to the interphase boundary (111). Experimental values h c that agree with calculated values are determined for the Ge/Si(111) and Si 3 N 4...

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Bibliographic Details
Published inBulletin of the Russian Academy of Sciences. Physics Vol. 76; no. 3; pp. 374 - 377
Main Authors Loshkarev, I. D., Trukhanov, E. M., Romanyuk, K. N., Kachanova, M. M.
Format Journal Article
LanguageEnglish
Published Heidelberg Allerton Press, Inc 01.03.2012
Springer Nature B.V
Subjects
Alloys
Dislocations
Epitaxial growth
Germanium
Hadrons
Heavy Ions
Island growth
Misfit dislocations
Nuclear Physics
Physics
Physics and Astronomy
Planes
Proceedings of the International Symposium “Ordering in Minerals and Alloys” (OMA-14)
Silicon nitride
Slip planes
Stress relaxation
Thickness
Interphase Boundary
Misfit Dislocation
Misfit Stress
Inter Phase Boundary
Plastic Relaxation
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Summary:A model for determining the critical thickness of a film h c is developed to introduce misfit dislocations in the slip planes of a film and a substrate parallel to the interphase boundary (111). Experimental values h c that agree with calculated values are determined for the Ge/Si(111) and Si 3 N 4 /Ge(111) heterosystems. The two-level epitaxial growth of Ge on Si is attained in the regime of combining the step-layer and 2D island growth mechanisms.
ISSN:1062-8738
1934-9432
DOI:10.3103/S1062873812030185