Ga2O3 solar-blind position-sensitive detectors

• Published in: Science China. Physics, mechanics & astronomy Vol. 63; no. 11; p. 117312
• Main Authors: Li, Kaiyong, Yang, Xun, Tian, Yongzhi, Chen, Yancheng, Lin, Chaonan, Zhang, Zhenfeng, Xu, Zhiyang, Zang, Jinhao, Shan, Chongxin
• Format: Journal Article
• Language: English
• Published: Beijing Science China Press 01.11.2020; Springer Nature B.V
• Subjects: Astronomy; Classical and Continuum Physics; Electric fields; Electrodes; Gallium oxides; Lasers; Light; Light intensity; Luminous intensity; Observations and Techniques; Photometers; Physics; Physics and Astronomy; Position sensing; Radiation; Recovery time; Semiconductors; Sensors; Signal to noise ratio; solar-blind; gallium oxide; position-sensitive detectors
• ISSN: 1674-7348; 1869-1927
• DOI: 10.1007/s11433-020-1581-4

Monoclinic Ga 2 O 3 ( β -Ga 2 O 3 ) is a promising material for achieving solar-blind photodetection because of its unique characteristics, including its high breakdown electric field, radiation hardness, thermal and chemical stabilities, and intrinsic visible/solar-blind properties. Until now, several studies have investigated the development of high-performance β -Ga 2 O 3 solar-blind photodetectors. However, these photodetectors can only detect the light intensity but not the light position. In this work, four-quadrant position-sensitive detectors (4Q-PSDs) were developed and demonstrated based on β -Ga 2 O 3 . 4Q-PSDs, comprising four identical metal-semiconductor-metal-structured photodetector components, demonstrate high uniformity, large signal-to-noise ratio, good ultraviolet/visible rejection ratio, and fast response/recovery time. Subsequently, the position of the illumination beam can be determined by analyzing the output signals of the four photodetector components. This work may indicate the promising application potential of the Ga 2 O 3 -based photodetectors in the fields of positioning, aligning, and monitoring the solar-blind beams.