SiC Cantilevers for Generating Uniaxial Stress

This paper demonstrates the first beam resonators fabricated from bulk high purity semi-insulating 4H Silicon Carbide wafers (HPSI 4H-SiC). Our innovations include: (1) Multi-level front-side, back-side inductively coupled plasma- deep reactive ion etching (ICP-DRIE) technology to fabricate thin, lo...

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Bibliographic Details
Published in2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) pp. 1655 - 1658
Main Authors Jiang, Boyang, Opondo, Noah, Wolfowicz, Gary, Yu, Pen-Li, Awschalom, David D., Bhave, Sunil A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2019
Subjects
DRIE
Etching
Fabrication
Nickel
resonator
Resonators
Silicon carbide
Stress
Substrates
uniaxial stress
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Summary:This paper demonstrates the first beam resonators fabricated from bulk high purity semi-insulating 4H Silicon Carbide wafers (HPSI 4H-SiC). Our innovations include: (1) Multi-level front-side, back-side inductively coupled plasma- deep reactive ion etching (ICP-DRIE) technology to fabricate thin, low-mass, bending-mode resonators framed by the SiC substrate (2) Laser Doppler Vibrometer (LDV) measurements of mechanical quality factors (Q) > 10,000 with frequencies ranging from 300 kHz to 8MHz and (3) Calculated uniaxial in-plane surface stress 20 MPa at top surface of resonator base when operating at resonance in vacuum.
ISSN:2167-0021
DOI:10.1109/TRANSDUCERS.2019.8808560