High-performance Ge p-i-n photodetector on Si substrate

High-performance and tensile-strained germanium （Ge） p-i-n photodetector is demonstrated on Si substrate. The epi- taxial Ge layers were prepared in an ultrahigh vacuum chemical vapor deposition （UHV-CVD） system using low tem- perature Ge buffer technique. The devices were fabricated by in situ dopi...

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Published inOptoelectronics letters Vol. 11; no. 3; pp. 195 - 198
Main Author 陈荔群 黄祥英 李敏 黄燕华 王月云 严光明 李成
Format Journal Article
LanguageEnglish
Published Tianjin Tianjin University of Technology 01.05.2015
Subjects
Lasers
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
PIN探测器
Si衬底
光电探测器
光电检测器
化学汽相淀积
少数载流子
性能
拉伸应变
Reverse Bias Voltage
Dark Current Density
Apply Physic Letter
Inductively Couple Plasma Etching
Grade Buffer Layer
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ISSN1673-1905
1993-5013
DOI10.1007/s11801-015-5044-8

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Summary:High-performance and tensile-strained germanium （Ge） p-i-n photodetector is demonstrated on Si substrate. The epi- taxial Ge layers were prepared in an ultrahigh vacuum chemical vapor deposition （UHV-CVD） system using low tem- perature Ge buffer technique. The devices were fabricated by in situ doping and using Si as passivation layer between Ge and metal, which can improve the ohmic contact and realize the high doping. The results show that the dark current of the photodetector with diameter of 24 lain is about 2.5 × 10.7 μA at the bias voltage of-1 V, and the optical responsivity is 0.1 A/W at wavelength of 1.55 μm. The 3 dB bandwidth （BW） of 4 GHz is obtained for the photodetector with diameter of 24 μm at reverse bias voltage of 1 V. The long diffusion time of minority carrier in n-type Ge and the large contact resistance in metal/Ge contacts both affect the performance of Ge photodetectors.
Bibliography:High-performance and tensile-strained germanium （Ge） p-i-n photodetector is demonstrated on Si substrate. The epi- taxial Ge layers were prepared in an ultrahigh vacuum chemical vapor deposition （UHV-CVD） system using low tem- perature Ge buffer technique. The devices were fabricated by in situ doping and using Si as passivation layer between Ge and metal, which can improve the ohmic contact and realize the high doping. The results show that the dark current of the photodetector with diameter of 24 lain is about 2.5 × 10.7 μA at the bias voltage of-1 V, and the optical responsivity is 0.1 A/W at wavelength of 1.55 μm. The 3 dB bandwidth （BW） of 4 GHz is obtained for the photodetector with diameter of 24 μm at reverse bias voltage of 1 V. The long diffusion time of minority carrier in n-type Ge and the large contact resistance in metal/Ge contacts both affect the performance of Ge photodetectors.
12-1370/TN
CHEN Li-qun, HUANG Xiang-ying, LI Min , HUANG Yan-hua , WANG Yue-yun , YAN Guang-ming , LI Cheng （（ 1. Chengyi College, Jimei University, Xiamen 361021, China 2. Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China）
ISSN:1673-1905
1993-5013
DOI:10.1007/s11801-015-5044-8