Growth and temperature-depending Raman characterization of different nitrogen-doped 4H-SiC crystals

• Published in: 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) Vol. 897; p. 1
• Main Authors: Yang, X. L., Chen, X. F., Peng, Y., Xie, X. J., Hu, X. B., Xu, X. G., Yu, P., Wang, R. P.
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Pfaffikon Trans Tech Publications Ltd 15.05.2017
• Subjects: Anharmonicity; Argon; Crystal growth; Crystals; Current measurement; Eddy currents; Electrical properties; Hall effect; N-doped SiC; Nitrogen; phonon lifetime; Raman spectra; Silicon carbide; Single crystals; Temperature; Temperature dependence; Temperature measurement; Raman Spectra; N-Doped SiC; Phonon Lifetime; Electrical Properties
• ISSN: 0255-5476; 1662-9752; 1662-9752
• DOI: 10.4028/www.scientific.net/MSF.897.307

Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. Different nitrogen-doped 4H-SiC single crystals were grown by the physical vapor transport method through mixing nitrogen gas to the argon growth atmosphere in the composition range from 0% to 10%. The electrical properties of the crystals, including resistivity and mobility were measured by Hall effect and contactless eddy current measurements. The Raman spectra of different N-doped 4H-SiC single crystals were investigated from 173 to 473 K. The temperature and doping dependence of optical modes was analyzed with anharmonic effect. The phonon lifetime was derived from the linewidths of Raman spectra via the energy-time uncertainty relation.