Challenges and Progress in Germanium-on-Insulator Materials and Device Development towards ULSI Integration

The recent progress in the fabrication of GeOI substrates and devices is reviewed. Improvements have been made in threading dislocation density, Ge-buried oxide interface passivation, device performance. The potential of various co-integration schemes (lateral and vertical) has been illustrated as a...

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Published inECS transactions Vol. 25; no. 7; pp. 351 - 362
Main Authors Augendre, Emmanuel, Sanchez, Loïc, Benaissa, Lamine, Signamarcheix, Thomas, Hartmann, Jean-Michel, Le Royer, Cyrille, Vinet, Maud, Van Den Daele, William, Damlencourt, Jean-François, Romanjek, Krunoslav, Pouydebasque, Arnaud, Batude, Perrine, Tabone, Claude, Mazen, Frédéric, Tauzin, Aurélie, Blanc, Nicolas, Pellat, Michel, Dechamp, Jérôme, Zussy, Marc, Scheiblin, Pascal, Jaud, Marie-Anne, Drazek, Charlotte, Maurois, Cécile, Piccin, Matteo, Abbadie, Alexandra, Lallement, Fabrice, Daval, Nicolas, Guiot, Eric, Rigny, Arnaud, Ghyselen, Bruno, Bourdelle, Konstantin, Boulanger, Fabien, Cristoloveanu, Sorin, Billon, Thierry, Faynot, Olivier, Deguet, Chrystel, Clavelier, Laurent
Format Journal Article
LanguageEnglish
Published 01.01.2009
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Abstract The recent progress in the fabrication of GeOI substrates and devices is reviewed. Improvements have been made in threading dislocation density, Ge-buried oxide interface passivation, device performance. The potential of various co-integration schemes (lateral and vertical) has been illustrated as alternatives to the fabrication of n-type germanium channel devices. GeOI is also shown to be a versatile platform for the monolithic integration of Si and III-V devices and tunneling field effect transistors.
AbstractList The recent progress in the fabrication of GeOI substrates and devices is reviewed. Improvements have been made in threading dislocation density, Ge-buried oxide interface passivation, device performance. The potential of various co-integration schemes (lateral and vertical) has been illustrated as alternatives to the fabrication of n-type germanium channel devices. GeOI is also shown to be a versatile platform for the monolithic integration of Si and III-V devices and tunneling field effect transistors.
Author Blanc, Nicolas
Boulanger, Fabien
Pouydebasque, Arnaud
Sanchez, Loïc
Mazen, Frédéric
Drazek, Charlotte
Lallement, Fabrice
Billon, Thierry
Jaud, Marie-Anne
Piccin, Matteo
Cristoloveanu, Sorin
Clavelier, Laurent
Van Den Daele, William
Tabone, Claude
Tauzin, Aurélie
Abbadie, Alexandra
Batude, Perrine
Zussy, Marc
Rigny, Arnaud
Pellat, Michel
Maurois, Cécile
Vinet, Maud
Damlencourt, Jean-François
Dechamp, Jérôme
Guiot, Eric
Le Royer, Cyrille
Scheiblin, Pascal
Daval, Nicolas
Bourdelle, Konstantin
Ghyselen, Bruno
Benaissa, Lamine
Signamarcheix, Thomas
Augendre, Emmanuel
Deguet, Chrystel
Faynot, Olivier
Hartmann, Jean-Michel
Romanjek, Krunoslav
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