Challenges and Progress in Germanium-on-Insulator Materials and Device Development towards ULSI Integration

The recent progress in the fabrication of GeOI substrates and devices is reviewed. Improvements have been made in threading dislocation density, Ge-buried oxide interface passivation, device performance. The potential of various co-integration schemes (lateral and vertical) has been illustrated as a...

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Published inECS transactions Vol. 25; no. 7; pp. 351 - 362
Main Authors Augendre, Emmanuel, Sanchez, Loïc, Benaissa, Lamine, Signamarcheix, Thomas, Hartmann, Jean-Michel, Le Royer, Cyrille, Vinet, Maud, Van Den Daele, William, Damlencourt, Jean-François, Romanjek, Krunoslav, Pouydebasque, Arnaud, Batude, Perrine, Tabone, Claude, Mazen, Frédéric, Tauzin, Aurélie, Blanc, Nicolas, Pellat, Michel, Dechamp, Jérôme, Zussy, Marc, Scheiblin, Pascal, Jaud, Marie-Anne, Drazek, Charlotte, Maurois, Cécile, Piccin, Matteo, Abbadie, Alexandra, Lallement, Fabrice, Daval, Nicolas, Guiot, Eric, Rigny, Arnaud, Ghyselen, Bruno, Bourdelle, Konstantin, Boulanger, Fabien, Cristoloveanu, Sorin, Billon, Thierry, Faynot, Olivier, Deguet, Chrystel, Clavelier, Laurent
Format Journal Article
LanguageEnglish
Published 01.01.2009
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Summary:The recent progress in the fabrication of GeOI substrates and devices is reviewed. Improvements have been made in threading dislocation density, Ge-buried oxide interface passivation, device performance. The potential of various co-integration schemes (lateral and vertical) has been illustrated as alternatives to the fabrication of n-type germanium channel devices. GeOI is also shown to be a versatile platform for the monolithic integration of Si and III-V devices and tunneling field effect transistors.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3203972