Optically writable and erasable memory in semi-insulating GaAs

A new optical memory is found in semi-insulating GaAs (S.I. GaAs). This memory phenomenon appears when the electric field in S.I. GaAs is higher than 1 kV/cm. The electrical conductivity changes reversibly with light irradiation. Both turn-on and turn-off functions are controlled by selecting the wa...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 30; no. 12A; pp. 3421 - 3424
Main Authors HIROHATA, T, SUZUKI, T, MIZUSHIMA, Y
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 01.12.1991
Subjects
Applied sciences
Electronics
Exact sciences and technology
Magnetic and optical mass memories
Storage and reproduction of information
Gallium Arsenides
Electrical conductivity
Erasable recording
Memory
Optical memory
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Summary:A new optical memory is found in semi-insulating GaAs (S.I. GaAs). This memory phenomenon appears when the electric field in S.I. GaAs is higher than 1 kV/cm. The electrical conductivity changes reversibly with light irradiation. Both turn-on and turn-off functions are controlled by selecting the wavelength. The mechanism of this optically controlled memory is discussed in terms of an electron trap and a carrier injection.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.30.3421