(Invited) Oxygen in Silicon: End of the Story?

Oxygen in silicon is investigated since decades. Although, the goals of research and development in this field changed over the years it is and it will remain an ongoing topic which is mainly driven by defect and impurity control in crystal growth and device processing. Examples from our own publish...

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Bibliographic Details
Published inECS transactions Vol. 86; no. 10; pp. 61 - 71
Main Authors Kissinger, Gudrun, Kot, Dawid, Schubert, Markus Andreas, Dabrowski, Jaroslaw, Sattler, Andreas, Mueller, Timo
Format Journal Article
LanguageEnglish
Published The Electrochemical Society, Inc 23.07.2018
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Summary:Oxygen in silicon is investigated since decades. Although, the goals of research and development in this field changed over the years it is and it will remain an ongoing topic which is mainly driven by defect and impurity control in crystal growth and device processing. Examples from our own published results about ab initio calculation for understanding of the initial stages of oxygen precipitation, investigation of the stoichiometry of oxygen precipitates, elucidation of the gettering mechanism of Cu at oxygen precipitates, and N-doping for the homogeneous oxygen precipitation during high temperature annealing in wafers optimized with respect to voids will be presented.
ISSN:1938-5862
1938-6737
1938-6737
1938-5862
DOI:10.1149/08610.0061ecst