Opportunities and Challenges of FinFET as a Device Structure Candidate for 14nm Node CMOS Technology

FinFET is a promising device candidate for 14nm node CMOS technology. We have developed FinFET device showing superior short channel control at 25nm gate length. This FinFET device featuring gate first high-k/metal gate and merged Epi source/drain process. Key process improvements to resolve the Fin...

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Bibliographic Details
Published inECS transactions Vol. 34; no. 1; pp. 81 - 86
Main Authors Yamashita, Tenko, Basker, Veeraraghavan, Standaert, Theodorus, Yeh, Chun-Chen, Faltermeier, Johnathan, Yamamoto, Toyoji, Lin, Chung-hsun, Bryant, Andres, Maitra, Kingsuk, Kulkarni, Pranita, Kanakasabapathy, Sivananda, Sunamura, Hiroshi, Wang, Junli, Jagannathan, Hemanth, Inada, Atsuro, Cho, Jin, Miller, Robert, Doris, Bruce, Paruchuri, Vamsi, Bu, Huiming, Khare, Mukesh, O'Neill, James, Leobandung, Effendi
Format Journal Article
LanguageEnglish
Published 01.01.2011
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Summary:FinFET is a promising device candidate for 14nm node CMOS technology. We have developed FinFET device showing superior short channel control at 25nm gate length. This FinFET device featuring gate first high-k/metal gate and merged Epi source/drain process. Key process improvements to resolve the FinFET unique challenges are presented. High drive currents have been obtained for both nFET and pFET. All these results show FinFET is the most promising candidate for 14nm node CMOS technology.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3567563