(Invited) Carrier Dynamics and Photon Management for Improvement in Quantum Efficiencies of GaN-Based Visible Light-Emitting Diodes

Data and analysis are presented employing several new methods to address carrier dynamics and photon management issues in order to improve internal quantum efficiency and light-extraction efficiency of GaN-based light-emitting diodes. For the carrier dynamics, studied are the effects of a newly-deve...

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Published inECS transactions Vol. 61; no. 4; pp. 109 - 116
Main Authors Ryou, Jae-Hyun, Kim, Jeomoh, Choi, Suk, Kim, Hee Jin, Lochner, Zachary, Ji, Mi-Hee, Satter, Md. Mahbub, Detchprohm, Theeradetch, Yoder, P. Douglas, Dupuis, Russell D, Asadirad, Mojtaba, Liu, Jianping, Kim, Jin Soo, Fischer, Alec, Juday, Reid, Ponce, Fernando, Kwon, Min-Ki, Yuan, Dajun, Guo, Rui, Das, Suman
Format Journal Article
LanguageEnglish
Published The Electrochemical Society, Inc 20.03.2014
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Summary:Data and analysis are presented employing several new methods to address carrier dynamics and photon management issues in order to improve internal quantum efficiency and light-extraction efficiency of GaN-based light-emitting diodes. For the carrier dynamics, studied are the effects of a newly-developed InAlN electron blocking layer and a p-InGaN:Mg layer on electron blocking and hole transport through multiple-quantum well active region. Also, a new technique of direct surface patterning is demonstrated using three-beam interference laser ablation for efficient photon management.
ISSN:1938-5862
1938-6737
DOI:10.1149/06104.0109ecst