Lasing properties of AlGaAs/GaAs material diode lasers grown by MOCVD using TBA in N2 ambient

• Published in: Journal of crystal growth Vol. 268; no. 3-4; pp. 415 - 419
• Main Authors: Bo, Baoxue, Tang, Xiaohong, Zhang, Baolin, Huang, Gensheng, Zhang, Yuanchang, Chuan, Tjin Swee
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Amsterdam Elsevier 01.08.2004
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Fundamental areas of phenomenology (including applications); Iii-v semiconductors; Lasers; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optics; Photoluminescence; Physics; Semiconductor lasers; laser diodes; Aluminium arsenides; 78.55.-m; Gallium arsenides; Inorganic compounds; Ternary compounds; Doping; Photoluminescence; Binary compounds; Bl. TBA; Crystal growth from vapors; 81.15.Gh; Experimental study; Quantum yield; Laser diodes; MOCVD; Precursor; CVD; 42.55.Px A3. Metalorganic chemical vapor deposition; B3. Laser diodes; Current density; Carrier gas; Heterostructures; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2004.04.065

In Metal-organic chemical deposition (MOCVD) growth of AlGaAs/GaAs heterostructure materials, AsH3 is normally used as the group V precursor and H2 is used as the carrier gas, which is very toxic and safety harzad. In this contribution, we will present the recent result of AlGaAs/GaAs material diode lasers grown by MOCVD using TBA as the group-V source and N2 as the carrier gas. In the growths, TMGa and TMAl were used as group-III sources, DEZn and silane were used as p-type and n-type dopants. A single quantum well (SQW) laser structure was adopted to characterize the quality of the materials grown. Broad-area stripe lasers with the stripe width of 150mum and different cavity lengths have been prepared. Lasing of the prepared devices has been successfully achieved with a low threshold current density of 506A/cm2. Devices with different cavity lengths (1200/1000/800mum) were cleaved and tested to obtain the internal loss alphai and internal quantum efficiency etai of the grown laser structure grown. An internal loss alphai of 9.7cm-1 and internal quantum efficiency etai of 81% were received. This is the first report so far for MOCVD growth of AlGaAs/GaAs diode laser materials using TBA as the group-V source and N2 as the carrier gas.