Lasing properties of AlGaAs/GaAs material diode lasers grown by MOCVD using TBA in N2 ambient
In Metal-organic chemical deposition (MOCVD) growth of AlGaAs/GaAs heterostructure materials, AsH3 is normally used as the group V precursor and H2 is used as the carrier gas, which is very toxic and safety harzad. In this contribution, we will present the recent result of AlGaAs/GaAs material diode...
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Published in | Journal of crystal growth Vol. 268; no. 3-4; pp. 415 - 419 |
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Main Authors | , , , , , |
Format | Conference Proceeding Journal Article |
Language | English |
Published |
Amsterdam
Elsevier
01.08.2004
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Subjects | |
Online Access | Get full text |
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Summary: | In Metal-organic chemical deposition (MOCVD) growth of AlGaAs/GaAs heterostructure materials, AsH3 is normally used as the group V precursor and H2 is used as the carrier gas, which is very toxic and safety harzad. In this contribution, we will present the recent result of AlGaAs/GaAs material diode lasers grown by MOCVD using TBA as the group-V source and N2 as the carrier gas. In the growths, TMGa and TMAl were used as group-III sources, DEZn and silane were used as p-type and n-type dopants. A single quantum well (SQW) laser structure was adopted to characterize the quality of the materials grown. Broad-area stripe lasers with the stripe width of 150mum and different cavity lengths have been prepared. Lasing of the prepared devices has been successfully achieved with a low threshold current density of 506A/cm2. Devices with different cavity lengths (1200/1000/800mum) were cleaved and tested to obtain the internal loss alphai and internal quantum efficiency etai of the grown laser structure grown. An internal loss alphai of 9.7cm-1 and internal quantum efficiency etai of 81% were received. This is the first report so far for MOCVD growth of AlGaAs/GaAs diode laser materials using TBA as the group-V source and N2 as the carrier gas. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/j.jcrysgro.2004.04.065 |