CdSe Embedded ZrHfO Gate Dielectric Nonvolatile Memories - Charge Trapping and Breakdown Studies

• Published in: ECS transactions Vol. 58; no. 5; pp. 109 - 113
• Main Authors: Lin, Chi-Chou, Kuo, Yue
• Format: Journal Article
• Language: English
• Published: The Electrochemical Society, Inc 31.08.2013
• ISSN: 1938-5862; 1938-6737
• DOI: 10.1149/05805.0109ecst

MOS capacitors composed of nc-CdSe embedded ZrHfO high-k gate dielectric stacks were fabricated and investigated on the charge trapping and breakdown mechanisms. The interface layer between the high-k film and Si wafer was transformed to a more SiO2-like HfSixOy group after the inclusion of nc-CdSe layer. The frequency-dependent conductance-voltage measurement result shows that part of the trapped charges were loosely trapped at the nc-CdSe/ZrHfO interface and easily tunneled back to the Si substrate under low frequency measurement condition. Compared with the control sample, the nc-CdSe embedded sample has a larger leakage current and a higher breakdown voltage due to the formation of new leakage paths and a larger physical thickness. The trapped charges can be retained in the nc-CdSe site after the breakdown of the high-k film.